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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF44H11 DESCRIPTION *With TO-220F package *Fast switching speeds *Low collector saturation voltage *Complement to type MJF45H11 APPLICATIONS *For general purpose power amplification and switching regulators,converters and power amplifiers applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Ta=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 10 20 36 2.0 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance from junction to case Thermal resistance from junction to ambient VALUE 3.5 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector capacitance CONDITIONS IC=30mA IB=0, IC=8A; IB=0.4A IC=8A ;IB=0.8A VCE=RatedBVCEO; VBE=0 VEB=5V; IC=0 IC=2A ; VCE=1V IC=4A ; VCE=1V IC=0.5A ; VCE=10V,f=20MHz f=1MHz ; VCB=10V 60 40 MIN 80 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 fT Ccb MJF44H11 TYP. MAX UNIT V 1.0 1.5 10 10 V V A A 50 130 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=0.5A 0.3 0.5 0.14 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJF44H11 Fig.2 Outline dimensions 3 |
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